材料科学
奥斯特瓦尔德成熟
电解质
电极
记忆电阻器
弯曲
导电体
可靠性(半导体)
灵活性(工程)
纳米技术
聚合物
蛋白质丝
电化学
复合材料
光电子学
化学工程
电子工程
功率(物理)
化学
物理
统计
数学
物理化学
量子力学
工程类
作者
Sin‐Hyung Lee,Hea‐Lim Park,Min‐Hoi Kim,Sujie Kang
标识
DOI:10.1021/acsami.9b10491
摘要
We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode–polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.
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