Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer
作者
Kang Wang,Kun Ruan,Wenbo Hu,Shengli Wu,Hongxing Wang
出处
期刊:日期:2019-05-01卷期号:: 22-22被引量:1
标识
DOI:10.23919/ltb-3d.2019.8735406
摘要
For solving the heat dissipation of high-power GaN devices, GaN was bonded on diamond at room temperature by using Mo/Au nano-adhesion layer. For a bonded GaN-on-diamond sample, the voidage is less than 3.0%, and the tensile strength reaches 6.8 MPa.