Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling

Trench-filling epitaxial growth of 4H-SiC by chemical vapor deposition (CVD) with and without HCl was analyzed based on a continuum-diffusion model including the Gibbs–Thomson effect. Qualitative reproduction of the reported observation showed that the effective surface free energy of SiC during CVD can be doubled by the addition of HCl