Electrolyte-Insulator-Semiconductor (EIS) with Gd2O3-based Sensing Membrane for pH-Sensing Applications

Gd2O3 as pH sensing membrane on Si substrate treated with annealing for the electrolyte-insulator-semiconductor has been fabricated. The high-k sensing membrane can obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate. The high-k Gd2O3 pH sensing membrane show promise for future industrial sensing device applications.