Effect of different growth temperature on the formation of ternary metal chalcogenides AgBiS2

Abstract AgBiS2 has been synthesized using solvothermal method at various growth temperatures of 140 °C, 160 °C, and 180 °C (ABS 1, ABS 2, ABS 3) with EG. In order to enhance the quality of AgBiS2, it has been synthesized and annealed at different temperatures. XRD pattern confirms the formation of cubic phase of AgBiS2 with binary phase of silver sulfide and bismuth sulfide. FESEM micrograph illustrated the grown samples with different morphologies. From UV-DRS spectroscopy, the measured value of optical band gap is 2.92 eV, 2.65 eV and 2.69 eV of ABS 1, ABS 2 and ABS 3 samples respectively. TEM analysis and FTIR spectrum supported the confirmation of AgBiS2 synthesis. XPS analysis confirmed the presence of Ag, Bi and S elements.