光电子学
材料科学
二极管
激光器
带隙
发光二极管
宽禁带半导体
量子阱
超发光二极管
光学
物理
作者
Romain Béal,Neng Liu,Khalid Moumanis,Vincent Aimez,Jan J. Dubowski
标识
DOI:10.1109/ico-ip.2011.5953731
摘要
Superluminescent diodes are used in numerous sensing and testing applications. To achieve the wide emission spectrum and high power required from such devices, we studied an innovative design constituting in several different bandgap energy sections independently electrically pumped. Bandgap modification was obtained by the UV laser quantum well intermixing process.
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