Solid solution InxGa1−xAsySbzP1−y−z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy

The diagrams of melt-solid solution (fusibility curves) and solid solution (I)-solid solution (II) (surfaces of spinodal decomposition of solid solutions) phase equilibria in the five-component system In-Ga-As-Sb-P (the solid solutions are isoperiodic to the GaSb and InAs substrates) are calculated. The concentration ranges of the isovalent substitution solid solutions In x Ga 1− x As y Sb z P 1− y − z , which are accessible for synthesis by liquid-phase epitaxy, are calculated.