Extra diffractions caused by stacking faults in cubic crystals

Extra diffractions, produced by stacking faults, of the type 13{422}, {200}, 13[442], 12{113}, 12 {133}, 12{115} and 13{115} have been studied in a silicon epilayer. A general analysis to predict these additional diffractions in a diamond or an fcc structure in any zone-axis diffraction pattern is proposed. Nanotwins have the same contribution to the intensity distribution of the extra diffractions as the stacking faults. Some aspects of microstructure in Si-Ge systems are discussed.