A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser

A technique for local layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films with midair cavity induced by near-infrared semiconductor diode laser (SDL) irradiation is demonstrated. After SDL irradiation, the silicon (Si) films were completely transferred and crystallized simultaneously on counter substrates. Electron backscatter diffraction pattern maps confirmed that the maximum grain size of the transferred Si films is 20 µm. High-performance polycrystalline Si thin-film transistors (TFTs) were successfully fabricated on the locally transferred Si films. These TFTs showed a high on/off ratio of more than 10 6 and a field-effect mobility as high as 492 cm 2 V −1 s −1 .