Auger recombination in strained InGaAsP quantum wells with E g = 0.7-1.6 eV

Auger coefficients have been measured in five light emitting diodes (LEDs) with strained quantum wells in active region covered a wide range of wavelength. LED were fabricated from identical high efficient laser heterostructures. The obtained Auger coefficients increase from 3 x 10-30 to 1.8 x 10-28 cm6/c as wavelength changes from 0.78 to 1.8 μm.