瞬态响应
超调(微波通信)
恒功率电路
低压差调节器
沉降时间
瞬态(计算机编程)
解耦(概率)
电容器
控制理论(社会学)
电压
负荷调节
响应时间
去耦电容器
CMOS芯片
跌落电压
电压调节器
电子工程
电气工程
计算机科学
工程类
阶跃响应
功率因数
计算机图形学(图像)
控制工程
人工智能
操作系统
控制(管理)
作者
Socheat Heng,Weichun Tung,Cong‐Kha Pham
标识
DOI:10.1109/iscas.2009.5118316
摘要
In this work, we propose a design technique of low power fully CMOS low-dropout voltage regulator (LDO) based on quick response (QR) circuit to improve the load transient response. Implemented in 0.18 mum CMOS technology, the LDO with proposed QR circuit can achieve a fast load transient responses with less transient overshoot or undershoot when driving a large load current. For 1 muF decoupling capacitor and 0.1 mA-150 mA load current change, the output undershoot and overshoot are 196 mV and 172 mV while the settling time is approximately 60 mus and 65 mus respectively . The proposed circuit dissipates a very low static power, with only 8.5 muA for light load and 35 muA for heavy load for output voltage VOUT = 1.2 V and input voltage VDD = VOUT + 1.0 V . This includes the reference circuit, the over current protection circuit as well as the feedback network.
科研通智能强力驱动
Strongly Powered by AbleSci AI