阴极发光
钻石
发光
硼
材料科学
杂质
金刚石材料性能
接受者
电致发光
菱形
人造金刚石
兴奋剂
Crystal(编程语言)
分析化学(期刊)
光电子学
纳米技术
化学
凝聚态物理
冶金
物理
有机化学
色谱法
程序设计语言
计算机科学
图层(电子)
作者
Hiroshi Kawarada,Yasuyuki Yokota,Yuta Mori,Kazuhito Nishimura,Tomoko Ito,Jun Suzuki,King-Sheng Mar,Jindong Wei,Akira Hiraki
摘要
Cathodoluminescence of diamond films has been investigated in the range of 2.0-3.5 eV. The CL spectra of diamond films are very sensitive to impurities such as nitrogen and boron. The main emission peak occurs around 2.8 eV in the films where the content of these impurities are lowered. The shape and behaviour of the spectra of the films are very similar to those obtained in natural type IIa diamond. The boron doping to the films increases the CL intensity. The luminescence is explained by donor-acceptor pair recombination where the acceptor is substitutional boron. In the semiconducting film, electroluminescence has been observed at metal/diamond(p-type) interfaces for the first time. From the CL imaging study, (100) growth sectors of diamond particle are much more luminescent than (111) sectors. This result indicates that the introduction of impurity or defect during crystal growth differs in each sectors.
科研通智能强力驱动
Strongly Powered by AbleSci AI