锭
往复运动
材料科学
平坦度(宇宙学)
蓝宝石
钻石
冶金
电镀
线速
薄脆饼
复合材料
机械工程
光电子学
光学
工程类
合金
激光器
物理
图层(电子)
气体压缩机
宇宙学
量子力学
作者
Hyoungjae Kim,Doyeon Kim,Chul-Min Kim,Haedo Jeong
出处
期刊:CIRP Annals
[Elsevier]
日期:2013-01-01
卷期号:62 (1): 335-338
被引量:37
标识
DOI:10.1016/j.cirp.2013.03.122
摘要
This study examined the multi-wire sawing of C-plane sapphire ingots using diamond wires. Feeding new wire during the reciprocating motion of the wire was found to vary the cutting force, wafer shape, and roughness as a result of the break-in effect. The break-in and wire wear seemed to cause a gradual change in the cutting performance along the ingot position. The cutting force results indicated that an inappropriate supply of wire yielded an unbalanced force between the front and back sides of the ingot, which was caused by a difference in the cutting depth along the ingot. The results showed that controlling the wire consumption resulted in an average flatness of 16 μm, with a maximum value of 26 μm.
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