带隙基准
泄漏(经济)
电压
带隙
光电子学
材料科学
电气工程
比克莫斯
温度系数
基质(水族馆)
击穿电压
大气温度范围
计算机科学
电子工程
物理
分压器
工程类
晶体管
跌落电压
生物
经济
宏观经济学
生态学
气象学
作者
Liviu Radoias,Cristi Zegheru,Gheorghe Brezeanu
标识
DOI:10.1109/smicnd.2012.6400752
摘要
This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm 2 . A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).
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