磁性
异质结
电场
材料科学
领域(数学)
凝聚态物理
物理
光电子学
数学
量子力学
纯数学
作者
John T. Heron,Darrell G. Schlom,R. Ramesh
出处
期刊:Applied physics reviews
[American Institute of Physics]
日期:2014-06-01
卷期号:1 (2): 021303-021303
被引量:242
摘要
Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO3, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.
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