响应度
材料科学
异质结
光探测
三元运算
比探测率
范德瓦尔斯力
光电子学
量子效率
钙钛矿(结构)
光电探测器
凝聚态物理
量子点
电子
光子学
量子
卤化物
纳米技术
光电导性
薄膜
范德瓦尔斯株
结合能
石墨烯
电子迁移率
纳米线
电子能带结构
半导体
作者
Jie Qiao,Fu Feng,Shuang Song,Tao Wang,Mengyan Shen,Guoping Zhang,Xiaocong Yuan,Michael G. Somekh
标识
DOI:10.1002/adfm.202110706
摘要
Abstract 2D materials and their van der Waals heterostructures are of great fundamental interest and have potential applications in emerging electronics devices. However, atomically thin photodetector applications have suffered from performance limitations because of low optical absorption. Here, a near‐infrared photodetector based on methylammonium lead halide perovskite quantum dots (MQDs), combined with Ta 2 NiSe 5 van der Waals heterostructures, is fabricated to take advantage of their energy band alignment. An ultrasensitive photoresponse with a detectivity of 6.0 × 10 12 Jones for 800 nm illumination is demonstrated. Furthermore, the field‐effect mobility and responsivity are enhanced by factors of 2 and 7.4, respectively, by interfacing Ta 2 NiSe 5 and the MQDs. These results indicate that the optoelectrical properties of 2D ternary Ta 2 NiSe 5 can be significantly optimized via hybridization with MQDs and can accelerate the evolution of MQD‐van der Waals heterostructure‐based devices.
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