鳍
平版印刷术
材料科学
计算机科学
多重图案
节点(物理)
制作
光电子学
过程(计算)
可制造性设计
纳米技术
电气工程
物理
抵抗
声学
操作系统
工程类
病理
复合材料
医学
替代医学
图层(电子)
作者
Chi-Chun Charlie Liu,Elliott Franke,Fee Li Lie,Stuart Sieg,Hsinyu Tsai,Kafai Lai,Hoa D. Truong,Richard A. Farrell,Mark Somervell,Daniel P. Sanders,Nelson Felix,Michael A. Guillorn,Sean Burns,David Hetzer,Akiteru Ko,John Arnold,Matthew Colburn
摘要
Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization approach and a hybrid approach for self-aligned Fin cut. The trade-off between each DSA flow is discussed in terms of placement error, Fin CD/profile uniformity, and restricted design. Challenges in pattern transfer are observed and process optimization are discussed. Finally, silicon Fins with 100nm depth and on-target CD using different DSA options with either lithographic or self-aligned customization approach are demonstrated.
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