压电
材料科学
陶瓷
电介质
兴奋剂
复合材料
矿物学
光电子学
化学
作者
Zhigang Gai,Minglei Zhao,Wenbin Su,Chunlei Wang,Jian Liu,Jialiang Zhang
标识
DOI:10.1007/s10832-013-9833-9
摘要
The effect of (Sc,Ta) doping on the properties of Bi3TiNbO9-based ceramics was investigated. The (Sc,Ta) modification greatly improves the piezoelectric activity of Bi3TiNbO9-based ceramics and significantly decreases the dielectric dissipation. The d33 of Bi3(Ti0.96Sc0.02Ta0.02)NbO9 was found to be 12 pC/N, the highest value among the Bi3TiNbO9-based ceramics and almost 2 times as much as the reported d33 values of the pure BTNO ceramics (~6pC/N). The high TC (higher than 900 °C) and stable piezoelectric and dielectric properties, demonstrating that the (Sc,Ta) modified Bi3Ti1−xScx/2Tax/2NbO9-based material a candidate for ultrahigh temperature applications. The new (ScTa) modification has an important typical significance, the way should be used for reference in constructing the new high performance materials.
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