红外线的
焦平面阵列
黑磷
材料科学
光学
磷
平面(几何)
光电子学
基点
纳米技术
物理
几何学
数学
冶金
作者
Simone Bianconi,Vinod K. Sangwan,Sonal V. Rangnekar,Jacob Rabinowitz,Chang‐Mo Kang,Linda M. Guiney,Mark C. Hersam,Hooman Mohseni
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2025-03-04
卷期号:12 (3): 1507-1514
被引量:2
标识
DOI:10.1021/acsphotonics.4c02109
摘要
Silicon-based complementary metal–oxide–semiconductor integrated circuits have enabled compact and inexpensive high-resolution cameras by efficiently reading the outputs from millions of pixels. For infrared cameras, however, the limited optical absorption of silicon requires the integration of an additional photosensitive material, which is patterned into a focal plane array of pixels and bonded with silicon integrated circuits, adding to the cost and complexity of the imagers. Here, we report an infrared focal plane array based on the direct transfer of a solution-processed black phosphorus film, with photosensitivity extending to mid-infrared wavelengths greater than 3 μm. This approach features a high fabrication yield (>90%) while avoiding expensive flip-chip bonding processes, paving the way for economical mid-infrared imagers. We characterized more than 70,000 functional pixels, which exhibit fast response times (<10 ms) and noise-equivalent irradiances below 10–5 and 10–4 W/cm2 at 2 and 3.4 μm wavelengths, respectively.
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