Advances in high power InAlGaAs/InP-based semiconductor lasers

By improving material quality and structure design, Laser Operations LLC has developed highly-efficient high-power InAlGaAs/InP broad area (BA) single emitter lasers at wavelengths ranging from 1210nm to 2060nm. These include 1270nm BA lasers with over 45% peak wall-plug-efficiencies (WPE) and >9W Continuous Wave (CW) powers, 1460nm BA lasers with 42% peak WPEs and >7W CW powers, 1925nm BA lasers with 25% peak WPEs and >3.5W CW powers, all from devices mounted on thermal-expansion-match substrates with hard solder. Using the high-efficiency, narrow far-field 1460nm chips, modules were manufactured with >250W output from 400um 0.22NA fiber. For the applications requiring tighter wavelength tolerance, such as solid state pumping, we implement internal gratings to narrow the spectral width and to reduce the wavelength tuning with temperature. 1530nm grating-locked lasers achieve nearly 40% WPEs and spectral widths of 0.6nm, which are nearly 10-times narrower than Fabry-Perot lasers at these wavelengths.