Switching Dynamic and EMI Characterization of a 1.2 kV/100 A All‐SiC Module With the Easy‐2B Package

ABSTRACT Switching transient processes of silicon carbide (SiC) devices induce several challenges, such as voltage and current overshoots, switching losses, , , and electromagnetic interference (EMI), threatening the safe and efficient operation of power electronic systems. Characterization of SiC modules is crucial to address these issues. This paper characterizes the dynamic and EMI performance of a state‐of‐the‐art all‐SiC module with the Easy‐2B package from Fuji Electric. Using a double pulse test (DPT) platform, the dynamic characteristics are assessed across varying load conditions and gate resistances. Additionally, EMI characteristics of the module are evaluated in a semi‐anechoic chamber. Results indicate significant impacts of gate drive parameters and load conditions on switching dynamic and EMI characteristics. These influences are further analyzed based on experimental results and theoretical analysis of the switching transient processes. Finally, the study identifies factors limiting switching speed improvements in SiC modules, including voltage and current overshoots, gate voltage oscillations, and EMI, offering valuable insights for improving device performance.