A Multi‐Directional GaN/TiO2 Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

Abstract In this work, a nanoelectromechanical system (NEMS) field‐effect transistor (FET)‐based ultra‐high pressure (PR) multi‐directional sensor utilizing a junctionless profile and gate‐all‐around geometry is proposed with the advanced materials GaN/TiO 2 , named MD‐JLFET PR sensor. A design guide approach is considered, and accurate analysis is conducted starting from the bending of cantilevers based on materials' Young's moduli due to applied pressure and finally extracting the dynamic range of the proposed PR sensor. For the first time, the direction and magnitude of pressure can be measured using gate‐source capacitances (C GS ). By employing oxide engineering and fringing field, the sensor achieves distinguishable states compared to previous works. Simulation results demonstrate that the PR sensor can measure pressures ranging from 10 to 30 MPa with high sensitivity in terms of C GS , I OFF , I ON , and I ON /I OFF . Therefore, the proposed FET‐based PR sensor holds promise for widespread industrial applications requiring ultra‐high pressure range measurement, directional pressure sensing, and high sensitivity.