反铁电性
上部结构
陶瓷
材料科学
复合材料
光电子学
电介质
铁电性
物理
热力学
作者
Leonardo Soares de Oliveira,Mao‐Hua Zhang,Jurij Koruza,Raquel Rodiquez-Lamas,Can Yildirim,Hugh Simons
标识
DOI:10.1021/acsmaterialslett.4c01080
摘要
NaNbO3-based antiferroelectric materials offer a promising pathway towards greener and more cost-effective energy storage devices.However, their intrinsic structural instabilities often lead to reduced energy density that compromises their performance and longevity.In this brief communication, we demonstrate how Dark-Field X-ray Microscopy -when carried out on the characteristically weak 1/4{843}pc superstructure reflection -can map the antiferroelectric phase and its strain heterogeneity in typically small, deeply-embedded grains of a NaNbO3 and 0.95NaNbO3-0.05SrSnO3ceramics, representative of different phase transition behavior.Our results clearly evidences the stabilizing effect of SrSnO3 on the antiferroelectric phase by enhancing the degree of mesostructural order.In doing so, our method establishes a new platform for exploring the impact of disorder on the long-range strain heterogeneity within antiferroelectrics and other materials with modulated crystal structures.
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