High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Abstract The full‐solution‐processed oxide thin‐film transistor (TFT) array is successfully realized by using ultrafast scanning diode laser annealing (USDLA). It integrates all solution‐processed functional thin films well, including low‐electrical‐resistivity transparent conductive indium‐tin‐oxide (ITO) thin film, high‐k dielectric hafnium‐aluminum‐oxide (HAO) thin film, and high‐quality semiconductor tungsten‐zinc‐tin‐oxide (WZTO) thin film. And the stacked multilayer thin films as a whole exhibit a smooth surface with the root mean square (RMS) roughness of 0.293 nm. The full‐solution‐processed TFT array exhibits a uniform overall TFT device performance, the average values including subthreshold swing of 118 mV dec −1 , threshold voltage of −0.45 V, and mobility of 12 cm 2 V −1 s −1 . Moreover, the full‐solution‐processed TFTs have good bias illumination stability, especially the V T shift of the PBIS and NBIS are only 0.09 and 0.4 V, respectively. The result implies that the USDLA technique can meet the large‐scale fabrication of full‐solution‐processed TFTs and provide a solid path to low‐cost high‐performance and large‐scale electronics.