A Novel Split Contact Field Plate LDMOS With a Floating Gate for Hot Carrier Degradation Improvement

In this paper, an innovative split contact field plate lateral double diffused MOS (CFP-LDMOS) with a floating gate is presented, specifically designed to improve hot carrier degradation (HCD) issues while providing a comprehensive analysis of its degradation mechanisms through the combination of experiment and TCAD simulation. By incorporating a floating gate and split hole contacts, the proposed structure facilitates an electric field redistribution compared to conventional CFP-LDMOS. This effectively reduces localized impact ionization in the drift region and suppresses high-energy carrier injection, thus extending the range of HCD SOA by 9.7 %. It is found that $I_{\mathrm{D}}$ degradation shows an initial increase followed by a decrease as a result of the competition between hole trapping and electron injection under high- $V_{G}$ stress conditions, while the self-heating effect in high-current operation determines the $V_{T}$ degradation. Without additional masks and process steps, the proposed CFP-LDMOS is well-suited for seamless integration into mass production.