Study of the Metal‐Semiconductor‐Metal Schottky Diode Based on β‐Gallium Oxide Microribbons Using a Geometrically Asymmetric Electrode

Herein, β ‐Ga 2 O 3 microribbons are fabricated via carbothermal reduction and a metal–semiconductor–metal (MSM) structured Schottky diode is constructed by employing geometrically asymmetric contact areas between Ag/Au electrodes and the microribbons. The asymmetric contact induces a difference in Schottky barrier heights at both ends of the metal–semiconductor interfaces, thereby enabling rectification behavior. Electrical characteristics reveal excellent device performance, including an ultralow turn‐on voltage (0.4 V) and a low specific on‐resistance (12.98 mΩ·cm 2 ), which are attributed to the low Schottky barrier (0.44 eV) at the Ag/Au‐ β ‐Ga 2 O 3 interface and superior carrier transport properties of the microribbons. Scanning electron microscope, X‐ray diffraction, diffuse reflectance spectroscopy, and photoluminescence spectra analyses confirm that β ‐Ga 2 O 3 microribbons have good crystallinity and low deep‐level defect concentration. The Schottky diode exhibits nonideal reverse leakage current (0.00373 mA at −8 V), which provides an effective strategy for modulating Schottky barriers through asymmetric contact, offering new insights for the design of high‐performance power devices.