记忆电阻器
铌
氧化铌
表征(材料科学)
材料科学
氧化物
纳米技术
光电子学
冶金
电气工程
工程类
作者
B. T. De Gregorio,Evgeniya H. Lock,Keith E. Knipling,Hans Cho
标识
DOI:10.1093/micmic/ozad067.048
摘要
Journal Article EELS Characterization of Niobium Oxide Memristor Devices Get access Bradley T De Gregorio, Bradley T De Gregorio US Naval Research Laboratory, Washington, DC, USA Corresponding author: bradley.degregorio@nrl.navy.mil Search for other works by this author on: Oxford Academic Google Scholar Evgeniya Lock, Evgeniya Lock US Naval Research Laboratory, Washington, DC, USA Search for other works by this author on: Oxford Academic Google Scholar Keith Knipling, Keith Knipling US Naval Research Laboratory, Washington, DC, USA Search for other works by this author on: Oxford Academic Google Scholar Hans Cho Hans Cho US Naval Research Laboratory, Washington, DC, USA Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 29, Issue Supplement_1, 1 August 2023, Pages 111–112, https://doi.org/10.1093/micmic/ozad067.048 Published: 22 July 2023
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