P‐1.20: Stability of Hydrogenated Amorphous Silicon Thin‐Film Transistors in High‐Brightness Liquid Crystal Displays

The threshold voltage behavior of TFTs is an important indicator of device stability. In this paper, the effects of silicon nitride content, film thickness, and structure of the gate insulating layer of amorphous silicon TFTs on device stability are investigated. The study reproduces the abnormal turnaround phenomenon of amorphous silicon TFT threshold voltage. We optimized the device conditions with high stability. Applying the optimized device conditions, we developed a 55‐inch 4K resolution LCD product with a brightness of 4000nits. Its performance is excellent in 3000hrs accelerated aging test.