High Electric Field Transport Characteristics in Field-Effect Transistors Based on Monolayer/Few-Layer MoS2

In recent years, the high electric field transport characteristics in field-effect transistors (FETs) based on monolayer/few-layer molybdenum disulfide (MoS ₂ ) have attracted much attention. However, as far as we know, there are no comprehensive and detailed reviews about the related investigations up to now. In this article, the recent advancements in numerical simulation and experimental investigation on the high electric field transport in monolayer/few-layer MoS ₂ FETs will be analyzed, respectively. Then, several promising research directions, which may further improve the high electric field transport characteristics, are expounded. In addition, some important parasitic effect at a high electric field in monolayer/few-layer MoS ₂ FETs, such as the self-heating effect, is introduced briefly. This article will provide meaningful guidance for the design of monolayer/few-layer MoS ₂ FETs with higher performance at high electric fields in the future.