Study on electron response to near-infrared, ultraviolet and extreme ultraviolet femtosecond laser by first-principle

The phenomenon of laser-induced electronic evolution in semiconductors is an essential issue in laser fabrication, which has been extensively investigated within the near-infrared and visible spectral ranges. However, electronic evolution at short wavelength laser has neither been systematically investigated. In this paper, time-dependent density functional theory is employed to investigate the response in silicon under laser irradiation of different wavelengths. The result shows that shorter wavelength induces the excitation of electrons to higher energy levels, consequently leading to increased impact ionization rates. Such a moderate excitation of energetic electrons even at low-medium intensity is considered as a distinctive feature of extreme ultraviolet light laser, which is expected to further enhance the quality of laser processing.