凝聚态物理
材料科学
热电效应
兴奋剂
带隙
热电材料
光电子学
物理
热力学
作者
Yunzhe Zhong,Shuailiang Chen,Jianfeng Cai,Zongwei Zhang,Feng Gao,S. H. Huo,Jiehua Wu,Chen Cui,Xiaojian Tan,Guoqiang Liu,Jun Jiang
标识
DOI:10.1021/acsaelm.4c00170
摘要
Bipolar effect is a common negative factor for the optimization of thermoelectric materials. Usually, it can be suppressed by enlarging the band gap or increasing the concentration of the majority carrier. Here, we report the anomalous bipolar-like effect and its suppression in GeMnTe2, an emerging thermoelectrics with narrow band gap and high carrier concentration. By introducing extra Sb doping, the transport inflection points induced by the bipolar-like effect are removed, accompanied by the decrease of the carrier concentration. Based on the X-ray diffraction and magnetic susceptibility measurements, the anomalous effect is attributed to the magnetic interaction rather than the competition between the majority and minority carriers. Owing to the suppression of the bipolar-like effect and optimization of carrier concentration, the peak zT of GeMnTe2 is significantly enhanced from 0.6 to 1.3 at 823 K.
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