铁电性
纳米线
材料科学
光致发光
光电子学
外延
钙钛矿(结构)
纳米技术
半导体
带隙
电介质
图层(电子)
化学
结晶学
作者
Han K. D. Le,Ye Zhang,Piush Behera,Artūras Vailionis,Amelyn Phang,Rafaela M. Brinn,Peidong Yang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-04-18
标识
DOI:10.1021/acs.nanolett.4c00453
摘要
The development of large-scale, high-quality ferroelectric semiconductor nanowire arrays with interesting light-emitting properties can address limitations in traditional wide-bandgap ferroelectrics, thus serving as building blocks for innovative device architectures and next-generation high-density optoelectronics. Here, we investigate the optical properties of ferroelectric CsGeX3 (X = Br, I) halide perovskite nanowires that are epitaxially grown on muscovite mica substrates by vapor phase deposition. Detailed structural characterizations reveal an incommensurate heteroepitaxial relationship with the mica substrate. Furthermore, photoluminescence that can be tuned from yellow-green to red emissions by varying the halide composition demonstrates that these nanowire networks can serve as platforms for future optoelectronic applications. In addition, the room-temperature ferroelectricity and ferroelectric domain structures of these nanowires are characterized using second harmonic generation (SHG) polarimetry. The combination of room-temperature ferroelectricity with photoluminescence in these nanowire arrays unlocks new avenues for the design of novel multifunctional materials.
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