材料科学
介观物理学
拓扑绝缘体
纳米晶
散射
纳米技术
纳米材料
化学气相沉积
化学物理
凝聚态物理
光学
物理
作者
Xiaowei Lu,Omar Khatib,Xutao Du,Jiahua Duan,Wei Wei,Xianli Liu,Hans A. Bechtel,Fausto D’Apuzzo,Mingtao Yan,Alexander Buyanin,Qiang Fu,Jianing Chen,Miquel Salmerón,Jie Zeng,Markus B. Raschke,Peng Jiang,Xinhe Bao
标识
DOI:10.1002/aelm.201700377
摘要
Abstract Topological insulators (TIs) are quantum materials with topologically protected surface states surrounding an insulating bulk. However, defect‐induced bulk conduction often dominates transport properties in most TI materials, obscuring the Dirac surface states. In order to realize intrinsic topological insulating properties, it is thus of great significance to identify the spatial distribution of defects, understand their formation mechanism, and finally control or eliminate their influence. Here, the electronic heterogeneity in polyol‐synthesized Bi 2 Se 3 and chemical vapor deposition‐grown Sb 2 Te 3 nanocrystals is systematically investigated by multimodal atomic‐to‐mesoscale resolution imaging. In particular, by combining the Drude response sensitivity of infrared scattering‐type scanning near‐field optical microscopy with the work‐function specificity of mirror electron microscopy, characteristic mesoscopic patterns are identified, which are related to carrier concentration modulation originating from the formation of defects during the crystal growth process. This correlative imaging and modeling approach thus provides the desired guidance for optimization of growth parameters, crucial for preparing TI nanomaterials to display their intrinsic exotic Dirac properties.
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