Modern Methods for the Microscopic Characterization of ZnO Varistor Grain Boundaries

Abstract This study examines ceramic varistors made from zinc oxide whose electrical resistance drops by many orders of magnitude within a few nanoseconds when a critical voltage threshold is exceeded. These unusual properties are caused by charges which are build into grain boundaries or accumulate near the grain boundaries. Zinc oxide crystals are polar and piezoelectric. Therefore, the charges in the grain boundary area and thus the electrical properties of the varistor depend on the orientation of the crystals towards the grain boundaries and on the mechanical tensions in the individual crystals. In this study, the microstructures of ZnO varistors, particularly the size and distribution of the grains and their orientation towards the grain boundaries will be examined. Among other things, lock-in thermography with a target preparation of strongly active grain boundaries and EBSD analyses in combination with SEM examinations, ion-etching and wet-chemical etching for the determination of crystal orientations are used. For selected grain boundaries, the electrical resistance in dependence of the applied voltage is determined via Micro-4 pole measurements.