异质结
材料科学
带材弯曲
光电流
半导体
光电子学
带隙
载流子
电场
表面状态
再分配(选举)
离解(化学)
化学物理
电子
密度泛函理论
分解水
凝聚态物理
耗尽区
电子迁移率
氢
电荷(物理)
电子能带结构
结合能
宽禁带半导体
表面电荷
电荷密度
电子转移
电子传输链
分子物理学
作者
Bo Peng,Zechang Wei,Chunmei Li,Donghai Qiu,Tongtong Wang,Yinxin Bian,Jie Zhang,Yuli Xiong,Swee Ching Tan
摘要
ABSTRACT Photoelectrochemical (PEC) water splitting provides a viable pathway for green hydrogen production, but the carrier regulation synergy of heterostructures remains elusive. Herein, an effective Bi 2 S 3 /In 2.77 S 4 /In(OH) 3 is constructed, the Bi 4f orbital shifts to lower binding energy (0.2 eV), forming the In−S−Bi to reduce the energy barriers for both hydroxyl dissociation and O─O coupling. As the surface potential of bulk Bi 2 S 3 is higher than surface In 2.77 S 4 /In(OH) 3 , the free electrons will flow from Bi 2 S 3 to In 2.77 S 4 /In(OH) 3 when the two semiconductors are contacted. This charge redistribution results in positive and negative charges are accumulated at Bi 2 S 3 and In 2.77 S 4 /In(OH) 3 sides, inducing the upward and downward band bending. The band bending induces an outward built‐in electric field originating from the surface potential gap (102 mV), and the density functional theory calculations evidence integrated type‐II band alignment. This heterostructure achieves a 2.15‐fold increase in photocurrent compared to Bi 2 S 3 , reaching 5.4 mA cm −2 . Hall effect reveals the Bi 2 S 3 /In 2.77 S 4 /In(OH) 3 has a resistivity of 9.25 Ω cm, which is much less than Bi 2 S 3 , further enhancing the directional charge transfer.
科研通智能强力驱动
Strongly Powered by AbleSci AI