材料科学
薄膜晶体管
光电子学
氧化物
电容器
电介质
泄漏(经济)
铟
晶体管
辐照
纳米技术
电压
电气工程
工程类
图层(电子)
冶金
物理
经济
核物理学
宏观经济学
作者
Do Kyung Kim,Kyeong-Ho Seo,Dae-Hyeon Kwon,Sang-Hwa Jeon,Yu-Jin Hwang,Ziyuan Wang,Jaehoon Park,Sin‐Hyung Lee,Jaewon Jang,In Man Kang,Xue Zhang,Jin‐Hyuk Bae
标识
DOI:10.1016/j.cej.2022.135833
摘要
A sustainable water etchant-based photopatterning method is proposed to achieve simultaneous oxide film patterning and remarkably minimize trap states of dielectric and semiconductor oxide films. By exquisitely controlling each processing parameter, well-defined aluminum oxide (AlOx) dielectric and indium oxide (InOx) semiconductor patterns are formed, despite using acid-free pure water etchant. The water etchant not only dissolves the nonultraviolet-irradiated regions but also promotes an effective hydrolysis reaction of irradiated regions, thereby forming low-defect oxide patterns. As a result, frequency-stable AlOx capacitors with low leakage current and high-performance bias-stable InOx TFTs with low activation energy are fabricated. In particular, photopatterned enhancement-mode InOx TFTs exhibit remarkably improved electrical properties, stability, and uniformity—15-fold higher saturation mobility and remarkably low coefficient of variation of 12.04 cm2 V−1 s−1 and 25.26%, respectively— compared with nonpatterned TFTs. With the proposed method, 3-V operating high-performance InOx/AlOx TFTs are successfully fabricated at a low processing temperature of 250 °C.
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