Manipulation of Antiskyrmion Phase in Mn2+xNi1−xGa Tetragonal Heusler System

The inhomogeneous magnetization distribution in antiskyrmions helps in nullifying the unwanted skyrmion Hall effect generally found in the current driven motion of skyrmions. At present, the observation of room-temperature antiskyrmion phase is limited to only a very few materials. Here, we present the evidence of a tunable antiskyrmion phase in the ${D}_{2d}$-symmetry-based tetragonal Heusler system ${\mathrm{Mn}}_{2+x}{\mathrm{Ni}}_{1\ensuremath{-}x}\mathrm{Ga}$. With the help of dc magnetization, ac susceptibility, and topological Hall effect measurements, we demonstrate that the potential antiskyrmion phase can be tuned over a wide compositional range with magnetic ordering temperature of above 600 K. In addition, we find the existence of multiple topological phase transitions for a certain Mn/Ni ratio where the magnetic anisotropy attains its maxima. Our micromagnetic simulations suggest that the transition from antiskyrmionium and antiskyrmion pockets to the conventional antiskyrmion phase at the optimal value of magnetic anisotropy might be responsible for the observed multiple topological transitions in the present materials. The expected small size of antiskyrmions in the present low magnetic-moment-based ferrimagnetic system gives a great advantage over other skyrmion and antiskyrmion hosting materials for their potential application in racetrack-based memory devices.