Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Abstract Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr 3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr 3 QDs:GO/ITO device is ≈ 1.4 × 10 7 , which is 1077 times larger than that in the dark condition (1.3 × 10 4 ). The SET/RESET voltages are + 2.28/ − 2.04 V and + 1.68/ − 1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load‐cycling. Before and after 10 4 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 10 7 and 2.3 × 10 7 , respectively. The ratio values are 8.8 × 10 4 and 2.9 × 10 4 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr 3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual‐controlled flexible RRAM devices.