杰纳斯
材料科学
二次谐波产生
偶极子
硫系化合物
二次谐波成像显微术
光电子学
对称(几何)
光学
分子物理学
纳米技术
物理
激光器
几何学
数学
量子力学
作者
Shi‐Qi LI,Chuan He,Hongsheng Liu,Luneng Zhao,Xinlong Xu,Maodu Chen,Lu Wang,Jijun Zhao,Junfeng Gao
标识
DOI:10.1002/adom.202200076
摘要
Abstract 2D materials are excellent platforms for nonlinear optical (NLO) response, especially second harmonic generation (SHG), due to its large surface to volume ratio and sub‐nanometer thickness. The SHG susceptibility strongly relies on the symmetry of materials. Constructing Janus structures can break the out‐of‐plane mirror symmetry, bringing about asymmetric charge distribution and leading to a built‐in electric field. Consequently, SHG response along the out‐of‐plane direction can be improved. In the current work, combining first‐principles calculations with independent particle approximation, the SHG response of nine Janus group‐III chalcogenide monolayers (M 2 XX', MM'X 2 ) are systematically evaluated. Both extraordinary in‐plane and out‐of‐plane SHG response are revealed in all the Janus structures. Besides, cation MM'X 2 Janus structures exhibit systemically higher SHG response than that of anion M 2 XX’ due to stronger dipole. Among them, GaInTe 2 possesses extremely high out‐of‐plane SHG response with d 31 up to 10490.4 pm V −1 at photon energy (PE) of 4.7 eV, enabling promising applications in ultraviolet NLO devices. The SHG intensity polar plots from Janus structures display unusual rotational symmetry at different PEs allowed by the out‐of‐plane SHG components. This work provides theoretical guidelines for further experimental explorations in 2D group‐III monochalcogenide Janus structures and paves the way for their utilization in NLO devices.
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