Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD

Φ80 mm‐diameter, highly <110>‐oriented β‐SiC wafers were ultra‐fast fabricated via halide chemical vapor deposition ( CVD ) using tetrachlorosilane (SiCl 4 ) and methane ( CH 4 ) as precursors. The effects of deposition temperature ( T dep ) and total pressure ( P tot ) on the orientations, microstructures, and deposition rate ( R dep ) were investigated. R dep dramatically increased with increasing T dep where maximum R dep was 930 μm/h at T dep = 1823 K and P tot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The <110>‐oriented β‐SiC was obtained at T dep > 1773 K and P tot = 1–4 kPa. Growth mechanism of <110>‐oriented β‐SiC has also been discussed under consideration of crystallographic planes, surface energy, and surface morphology.