A compact model of I -V characteristic degradation for organic thin film transistors

The lifetime of organic thin film transistors is known to be significantly shorter than that of silicon MOSFETs. It is hence important to predict their degradation at early design phase. This paper proposes a drain current model for simulating organic thin film transistors. The proposed model characterizes the degradation by the changes of the threshold voltage and carrier mobility. With the extracted parameters, the proposed model successfully reproduces temporal performance degradation of the fabricated devices. The experimental results also demonstrate that the proposed model achieves 38% better accuracy compared to the existing model.