纳米技术
过渡金属
材料科学
化学
催化作用
生物化学
作者
Zhong Lin,Bruno R. Carvalho,Ethan Kahn,Ruitao Lv,Rahul Rao,Humberto Terrones,M. A. Pimenta,Mauricio Terrones
出处
期刊:2D materials
[IOP Publishing]
日期:2016-04-13
卷期号:3 (2): 022002-022002
被引量:1001
标识
DOI:10.1088/2053-1583/3/2/022002
摘要
Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered materials, have provided researchers a fertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applications of TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defects is important in order to move forward the field of Defect Engineering in TMDs. Finally, we also provide our perspective on the challenges and opportunities in this emerging field.
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