钪
材料科学
晶体管
退火(玻璃)
光电子学
离子
黑磷
分析化学(期刊)
冶金
化学
电压
电气工程
色谱法
工程类
有机化学
作者
Ling Li,Michael Engel,Damon B. Farmer,Shu‐Jen Han,H.-S. Philip Wong
出处
期刊:ACS Nano
[American Chemical Society]
日期:2016-04-05
卷期号:10 (4): 4672-4677
被引量:121
标识
DOI:10.1021/acsnano.6b01008
摘要
A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness.
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