异质结
光电流
光电子学
材料科学
整改
二极管
量子隧道
制作
空间电荷
暗电流
光电效应
紫外线
耗尽区
分析化学(期刊)
电压
半导体
化学
光电探测器
物理
医学
替代医学
量子力学
电子
色谱法
病理
作者
Mrinal Dutta,Durga Basak
摘要
p - Zn O ∕ n - Si heterojunction is achieved by depositing Al–N codoped p-type ZnO film on n-Si by low-cost sol-gel technique. The junction shows good diode characteristics with rectification ratio (IF∕IR)∼10 at 4V in the dark. The photoresponse of the heterojunction is investigated by studying the current-voltage characteristics under the ultraviolet (370nm) and visible light (450nm) illuminations. By fitting the experimental data, we have proposed the current transport mechanism to be dominated by the recombination tunneling at lower and by the space-charge limited current at higher forward voltages, which are further supported by the photocapacitance and photocurrent spectra.
科研通智能强力驱动
Strongly Powered by AbleSci AI