材料科学
量子点
光电流
多硫化物
辅助电极
电极
电解质
光电子学
图层(电子)
化学浴沉积
介电谱
能量转换效率
化学工程
光电效应
光伏系统
纳米技术
薄膜
电化学
化学
物理化学
工程类
生态学
生物
作者
Yuanqiang Wang,Yichuan Rui,Qinghong Zhang,YaoGang Li,Hongzhi Wang
摘要
CuInS2 quantum-dot sensitized TiO2 photoanodes with In2S3 buffer layer were in situ prepared via chemical bath deposition of In2S3, where the Cd-free In2S3 layer then reacted with TiO2/CuxS which employed a facile SILAR process to deposit CuxS quantum dots on TiO2 film, followed by a covering process with ZnS layer. Polysulfide electrolyte and Cu2S on FTO glass counter electrode were used to provide higher photovoltaic performance of the constructed devices. The characteristics of the quantum dots sensitized solar cells were studied in more detail by optical measurements, photocurrent–voltage performance measurements, and impedance spectroscopy. On the basis of optimal CuxS SILAR cycles, the best photovoltaic performance with power conversion efficiency (η) of 1.62% (Jsc = 6.49 mA cm–2, Voc = 0.50 V, FF = 0.50) under full one-sun illumination was achieved by using Cu2S counter electrode. Cu2S-FTO electrode exhibits superior electrocatalytic ability for the polysulfide redox reactions relative to that of Pt-FTO electrode.
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