X-ray-photoemission-spectroscopy evidence for anomalous oxidation states of silicon after exposure of hydrogen-terminated single-crystalline (100) silicon to a diluted N2 : N2O atmosphere
作者
G. F. Cerofolini,C. Galati,L. Renna,O. Viscuso,M. Camalleri,Simona Lorenti,Guglielmo G. Condorelli,Ignazio L. Fragalà
出处
期刊：Journal of Physics D [Institute of Physics] 日期：2002-05-02卷期号：35 (10): 1032-1038被引量：17
标识
DOI：10.1088/0022-3727/35/10/311
摘要
X-ray-photoemission-spectroscopy evidence for anomalous oxidation states of silicon after exposure of hydrogen-terminated single-crystalline (100) silicon to a diluted N2 : N2O atmosphere, G F Cerofolini, C Galati, L Renna, O Viscuso, M Camalleri, S Lorenti, G G Condorelli, I L Fragalà
PDF的下载单位、IP信息已删除
(2025-6-4)
cdercder
GingerF
文静的含蕾
渡人舟
活雷锋
aajhajkahna
无极微光
Nole
Criminology34
赵焱峥
小马要努力
奔跑
阮成龍
satan9
Freya1528
MchemG
初景
Essence
stuffmatter
heekkll
皖公网安备34019202002308
