Infrared hot-electron transistor with a narrow bandpass filter for high temperature operation

We have designed and demonstrated a narrow bandpass filter, which is composed of a double-barrier structure, for an infrared hot-electron transistor with a cutoff wavelength at 14 μm. The filter is capable of suppressing the low energy thermally assisted tunneling current as well as the high energy thermionic emission current that are not degenerate with the photoelectrons. As a result, the detector can be operated at 77 K with a 45% BLIP level and an estimated NEΔT of 38 mK.