Stabilization of tetragonal ZrO2 with Al2O3 in reactive magnetron sputtered thin films
作者
C. M. Gilmore,C. Quinn,S. B. Qadri,Charles R. Gossett,Earl F. Skelton
出处
期刊:Journal of vacuum science & technology [American Institute of Physics] 日期:1987-07-01卷期号:5 (4): 2085-2087被引量:21
标识
DOI:10.1116/1.574925
摘要
Thin-film mixtures of zirconia and alumina 1–2 μm in thickness were produced by sputtering composite targets of zirconium and aluminum metals and reacting the metal vapor with oxygen. X-ray and selected area electron diffraction indicated that the films deposited at room temperature were amorphous. Rutherford backscattering measurements indicated that the films were stoichiometric. Annealing at 1000 °C for 48 h produced ordering of the zirconia phase, and the zirconia crystal structure was strongly dependent upon the relative amounts of zirconium and aluminum. Pure zirconia was monoclinic as was a mixture with a zirconium-to-aluminum atom ratio of 0.76:0.24. For the mixture with a zirconium-to-aluminum atom ratio of 0.52:0.48 the tetragonal phase of zirconia was observed with only a trace of the monoclinic phase. The alumina phase apparently orders much more slowly than zirconia, and no alumina diffraction peaks were observed in any of these mixtures with zirconium-to-aluminum atom ratios down to 0.52:0.48.