计算机科学
编译程序
记忆电阻器
冯·诺依曼建筑
横杆开关
抽象
并行计算
计算机体系结构
领域特定语言
程序设计语言
电信
认识论
电气工程
工程类
哲学
作者
Adam Siemieniuk,Lorenzo Chelini,Asif Ali Khan,Jerónimo Castrillón,Andi Drebes,Henk Corporaal,Tobias Grosser,Martin Kong
标识
DOI:10.1109/tcad.2021.3101464
摘要
Memristive devices promise an alternative approach toward non-Von Neumann architectures, where specific computational tasks are performed within the memory devices. In the machine learning (ML) domain, crossbar arrays of resistive devices have shown great promise for ML inference, as they allow for hardware acceleration of matrix multiplications. But, to enable widespread adoption of these novel architectures, it is critical to have an automatic compilation flow as opposed to relying on a manual mapping of specific kernels on the crossbar arrays. We demonstrate the programmability of memristor-based accelerators using the new compiler design principle of multilevel rewriting, where a hierarchy of abstractions lowers programs level-by-level and perform code transformations at the most suitable abstraction. In particular, we develop a prototype compiler, which progressively lowers a mathematical notation for tensor operations arising in ML workloads, to fixed-function memristor-based hardware blocks.
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