Defects evolution induced by Fe and He ions irradiation in Ti3AlC2

In the present study, Ti 3 AlC 2 samples were irradiated at room temperature by Fe ions, He ions , sequential Fe and He ions. Our results demonstrate the evolution of irradiation defects with the damage level and sequential two sorts of ions irradiation. A large number of stacking faults and a small amount of twins are formed under the damage level of ∼8 displacements per atom during Fe ions irradiation. The former contributes much to the formation of the latter. In the sequential irradiated samples, the following He ions irradiation promotes a further evolution of the defects induced by Fe ions irradiation resulting in significant decreases in the intensity of GIXRD; the fluence of 1 × 10 16 He/cm 2 gives rise to a high density of dislocation loops parallel to the basal plane and meanwhile a few of He bubbles are observed.