Defects evolution induced by Fe and He ions irradiation in Ti3AlC2

In the present study, Ti3AlC2 samples were irradiated at room temperature by Fe ions, He ions, sequential Fe and He ions. Our results demonstrate the evolution of irradiation defects with the damage level and sequential two sorts of ions irradiation. A large number of stacking faults and a small amount of twins are formed under the damage level of ∼8 displacements per atom during Fe ions irradiation. The former contributes much to the formation of the latter. In the sequential irradiated samples, the following He ions irradiation promotes a further evolution of the defects induced by Fe ions irradiation resulting in significant decreases in the intensity of GIXRD; the fluence of 1 × 1016 He/cm2 gives rise to a high density of dislocation loops parallel to the basal plane and meanwhile a few of He bubbles are observed.